 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DMN5L06DW Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) S2 G2 SOT-363 A D2 Dim A S1 Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 G1 B BC D1 C D F H M 0.65 Nominal G H K Mechanical Data * * * * * * * * Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish 3/4 Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: Date Code and Type Code, See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) J K L M a J D F L All Dimensions in mm D2 G1 S1 S2 G2 D1 Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 50 50 20 40 280 1.5 200 833 -55 to +150 Units V V V mA A mW C/W C Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30751 Rev. 1 - 2 1 of 5 www.diodes.com DMN5L06DW a Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance @ TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C @ TC = 125C IDSS IGSS VGS(th) RDS (ON) ID(ON) |Yfs| VSD Ciss Coss Crss Min 50 3/4 3/4 0.49 3/4 3/4 0.5 200 0.5 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 1.6 2.2 1.0 3/4 3/4 3/4 3/4 3/4 Max 3/4 0.1 500 20 1.2 3 4 3/4 3/4 1.4 50 25 5.0 Unit V A nA V W A mS V pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250mA VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA 1.5 VGS = 10V 8V 6V 5V 4V 3V 1 8V 10V 6V VDS = 10V Pulsed 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 5V 4V 0.9 3V 0.1 TA = 150 C TA = 125 C TA = 85 C 0.6 0.01 TA = 25 C TA = 0 C TA = -25 C TA = -55 C 0.3 0 0 1 2 3 4 5 0.001 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics DS30751 Rev. 1 - 2 2 of 5 www.diodes.com DMN5L06DW 0.8 10 VDS = 10V ID = 1mA Pulsed NEW PRODUCT VGS(th), GATE THRESHOLD VOLTAGE (V) 0.7 0.6 VGS = 10V Pulsed TA = 125 C TA = 150 C TA = 85 C 0.5 0.4 0.3 0.2 0.1 0 -75 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature TA = 25 C TA = 0 C TA = -25 C 1 TA = -55 C 0.1 0.001 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 10 VGS = 5V Pulsed 8 7 TA = 125 C TA = 150 C TA = 85 C TA = 25 C Pulsed 6 5 1 TA = -55 C TA = 25 C TA = 0 C TA = -25 C 4 3 2 1 ID = 280mA ID = 140mA 0.1 0.001 0.01 0.1 1 0 0 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2.5 2.3 2.1 1.9 ID = 280mA VGS = 10V Pulsed VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 1 VGS = 0V Pulsed IDR, REVERSE DRAIN CURRENT (A) TA = 150 C 0.1 TA = 125 C 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 ID = 140mA TA = 85 C 0.01 TA = 25 C TA = -25 C TA = -55 C 0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 1 Tch, CHANNEL TEMPERATURE ( C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature DS30751 Rev. 1 - 2 3 of 5 www.diodes.com DMN5L06DW |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 1 VDS = 10V Pulsed TA = -25 C TA = -55 C NEW PRODUCT IDR, REVERSE DRAIN CURRENT (A) VGS = 10V 0.1 TA = 0 C 0.1 TA = 25 C VGS = 0V 0.01 TA = 85 C TA = 125 C TA = 150 C TA = 25C Pulsed 0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 1 0.01 0.001 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250 P, POWER DISSIPATION (mW) 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 11 Derating Curve - Total DS30751 Rev. 1 - 2 4 of 5 www.diodes.com DMN5L06DW NEW PRODUCT Ordering Information Device DMN5L06DW-7 Notes: (Note 5) Packaging SOT-363 Shipping 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information (Note 6) D2 G1 S1 K5L YM S2 G2 D1 K5L = DMN5L06DW Product Type Marking Code (See Note 6) YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September Notes: 6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 Jun 6 Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30751 Rev. 1 - 2 5 of 5 DMN5L06DW |
Price & Availability of DMN5L06DW
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |